5

256Mb: x4, x8, x16 DDR333 SDRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

256Mx4x8x16DDR333_B.p65 – Rev. B; Pub. 10/01

©2001, Micron Technology, Inc.

256Mb: x4, x8, x16

DDR333 SDRAM Addendum

PRELIMINARY

PIN DESCRIPTIONS (continued)

BALL / PIN NUMBERS

FBGA

TSOP

SYMBOL

TYPE

DESCRIPTION

A8, B9, B7

2, 4, 5,

DQ0-2

I/O

Data Input/Output: Data bus for x16

C9, C7, D9

7, 8, 10

DQ3-5

D7, E9, E1

11, 13, 54

DQ6-8

D3, D1, C3

56, 57, 59

DQ9-11

C1, B3, B1,

60, 62, 63,

DQ12-14

A2

65

DQ15

A8, B7, C7,

2, 5, 8,

DQ0-2

I/O

Data Input/Output: Data bus for x8

D7, D3, C3,

11, 56, 59

DQ3-5

B3, A2

62, 65

DQ6-7

B7, D7, D3,

5, 11, 56

DQ0-2

I/O

Data Input/Output: Data bus for x4

B3

62

DQ2

E3

51

DQS

I/O

Data Strobe: Output with read data, input with write data. DQS is

E7, E3

16, 51

LDQS, UDQS

edge-aligned with read data, centered in write data. It is used to

capture data. For the x16 , LDQS is DQS for DQ0-DQ7 and UDQS

IS DQS for DQ8-DQ15. Pin 16 (H7) is NC on x4 and x8.

14, 17, 25,

NC

-

No Connect: These pins should be left unconnected.

43, 53

19, 50

DNU

–

Do Not Use: Must float to minimize noise on Vref

B2, D2, C8, 3, 9, 15, 55,

Supply

DQ Power Supply: +2.5V ±0.2V. Isolated on the die for improved

E8, A9

61

noise immunity.

A1, C2, E2,

6, 12, 52,

Supply

DQ Ground. Isolated on the die for improved noise immunity.

B8, D8

58, 64

F8, M7, A7

1, 18, 33

Supply

Power Supply: +2.5V ±0.2V.

A1, A3, F2,

34, 48, 66

Supply

Ground.

M3

F1

49

Supply

SSTL_2 reference voltage.

F9

17

A13

I

Address input A13 for 1Gb devices.