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USB5537B Scheda tecnica(PDF) 63 Page - Microchip Technology |
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USB5537B Scheda tecnica(HTML) 63 Page - Microchip Technology |
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63 / 79 page ![]() 2012 - 2015 Microchip Technology Inc. DS00001682C-page 63 USB5537B 6.0 DC PARAMETERS 6.1 Maximum Ratings Note 1: Stresses above the specified parameters could cause permanent damage to the device. This is a stress rat- ing only. Therefore, functional operation of the device at any condition above those indicated in the operation sections of this specification are not implied. 2: When powering this device from laboratory or system power supplies, it is important that the absolute max- imum ratings not be exceeded or device failure can result. Some power supplies exhibit voltage spikes on their outputs when the AC power is switched on or off. In addition, voltage transients on the AC power line may appear on the DC output. When this possibility exists, it is suggested that a clamp circuit be used. 6.2 Operating Conditions Parameter Symbol MIN MAX Units Comments Storage Temperature TA -55 150 °C Lead Temperature °C Refer to JEDEC Specification J-STD- 020D. 1.25 V supply voltage VDD12 -0.5 1.6 V 3.3 V supply voltage VDD33 -0.5 4.0 V Voltage on USB+ and USB- pins -0.5 (3.3 V supply voltage + 2) 6 V Voltage on any signal powered by VDD33 rail -0.5 VDD33 + 0.3 V Voltage on any signal pin powered by the VDD12 -0.5 VDD12 + 0.3 V HBM ESD Performance 2kV Power Consumption 2.0 W Parameter Symbol MIN MAX Units Comments USB5537B Operating Temperature TA 070 °C Die Temperature TJ 115 °C 1.25 V supply voltage VDD12 1.22 1.31 V 3.3 V supply voltage VDD33 3.0 3.6 V 1.25 V supply rise time tRT 0400 s(Table 6-1) 3.3 V supply rise time tRT 0400 s(Table 6-1) Voltage on USB+ and USB- pins -0.3 5.5 V If any 3.3 V supply voltage drops below 3.0 V, then the MAX becomes: (3.3 V supply voltage) + 0.5 5.5 Voltage on any signal powered by VDD33 rail -0.3 VDD33 V |
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