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STL42P6LLF6 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STL42P6LLF6 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STL42P6LLF6 Electrical ratings DocID025457 Rev 3 3/14 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 42 A ID (1) Drain current (continuous) at TC = 100 °C 30 A ID (1)(3) Drain current (pulsed) 168 A ID (2) Drain current (continuous) at Tpcb= 25 °C 9 A ID (2) Drain current (continuous) at Tpcb= 100 °C 6.6 A IDM (2)(3) Drain current (pulsed) 36 A PTOT (1) Total dissipation at TC = 25 °C 100 W PTOT (2) Total dissipation at Tpcb= 25 °C 4.8 W Tstg Storage temperature -55 to 175 °C Tj Maximum junction temperature 175 °C Notes: (1) The value is limited by Rthj-case. (2) The value is limited by Rthj-pcb. (3) Pulse width is limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb max 31.3 °C/W Notes: (1) When mounted on FR-4 board of 1 inch², 2 Oz Cu, t < 10 s. For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. |
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