STL42P6LLF6 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STL42P6LLF6

4/14

DocID025457 Rev 3

Electrical characteristics

(TC= 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 250 µA

IDSS

Zero gate voltage Drain

current

VGS = 0 V, VDS = 60 V

µA

VGS = 0 V, VDS = 60 V,

TC = 125 °C

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 4.5 A

0.023

0.026

VGS = 4.5 V, ID= 4.5 A

0.028

0.034

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

3780

Coss

Output capacitance

262

Crss

Reverse transfer

capacitance

170

Total gate charge

VDD = 30 V, ID = 9 A,

VGS = 4.5 V (see Figure 14:

"Gate charge test circuit" )

Qgs

Gate-source charge

10.8

Qgd

Gate-drain charge

10.5

Gate input resistance

ID = 0 A, gate DC bias = 0 V,

f = 1 MHz, magnitude of

alternative signal = 20 mV

1.7

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 4.5 A

RG = 4.7

Ω, VGS = 10 V (see

Figure 13: "Switching times

test circuit for resistive load" )

51.4

Rise time

td(off)

Turn-off-delay time

171

Fall time

For the P-channel Power MOSFET, current polarity of voltages and current have

to be reversed.

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