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STP110N8F7 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STP110N8F7 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  November 2015 DocID027154 Rev 2 1/13 This is information on a product in full production. www.st.com STP110N8F7 N- channel 80 V, 6.4 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 mΩ 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STP110N8F7 110N8F7 TO-220 Tube |
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