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STP110N8F7 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STP110N8F7
Spiegazioni elettronici  High avalanche ruggedness
PDF  13 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP110N8F7 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STP110N8F7
Electrical ratings
DocID027154 Rev 2
3/13
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
80
V
VGS
Gate-source voltage
±20
V
ID
Drain current (continuous) at TC = 25 °C
80
(1)
A
ID
Drain current (continuous) at TC = 100 °C
76
A
IDM
(2)
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25 °C
170
W
EAS
(3)
Single pulse avalanche energy
220
mJ
TJ
Operating junction temperature
-55 to 175
°C
Tstg
Storage temperature
°C
Notes:
(1)
Limited by package
(2)
Pulse width is limited by safe operating area
(3)
Starting Tj = 25°C, Id = 25 A, Vdd = 40 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.88
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W



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