MICROWAVE CORPORATION

8 - 77

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8

HMC314

v02.0802

Outline Drawing

Absolute Maximum Ratings

Truth Table

GaAs InGaP HBT MMIC DRIVER

AMPLIFIER, 0.7 - 4.0 GHz

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

Vs

Vctl

Is

Ictl

State

5V

5V

150 mA

12 mA

On

5V

0V

<1 µA

<1 µA

Power Down

Collector Bias Voltage (Vcc)

+5.0 Vdc

Control Voltage Range (Vpd)

-0.2 to 3.5 Vdc

RF Input Power (RFin)(Vs = +5.0 Vdc)

+20 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 65 °C)

(derate 6.57 mW/°C above 65 °C)

0.558 W

Thermal Resistance

(junction to lead)

152 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +65 °C