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2SB850 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB850 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB850 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -40 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 -7 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.2 V VB E(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -10 μ A hFE DC Current Gain IC= -2A; VCE= -5V 40 240 |
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