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2SB850 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte 2SB850
Spiegazioni elettronici  Wide Area of Safe Operation
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB850 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

  2SB850 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB850 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SB850
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.2V(Max) @IC= -5A
·Wide Area of Safe Operation
·Complement to Type 2SD1117
APPLICATIONS
·Designed for audio amplifier, series regulators and general
purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
-2
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.5
℃/W


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