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CT3331-R3 Scheda tecnica(PDF) 4 Page - CT Micro International Corporation

Il numero della parte CT3331-R3
Spiegazioni elettronici  P-Channel Enhancement MOSFET
PDF  11 Pages
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Produttore elettronici  CTMICRO [CT Micro International Corporation]
Homepage  http://www.ct-micro.com/
Logo CTMICRO - CT Micro International Corporation

CT3331-R3 Scheda tecnica(HTML) 4 Page - CT Micro International Corporation

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CT Micro
Rev 3
Proprietary & Confidential
Page 4
Oct, 2014
CT3331-R3
P-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
VSD
Body Diode Forward Voltage
VGS = 0V, ISD = -1.0A
-0.78
-1.2
V
ISD
Body Diode Continuous Current
-2.8
A
1
Note:
1. The power dissipation is limited by 150
℃ junction temperature.
2. Device mounted on a glass-epoxy board
3. The data tested by pulsed , pulse width
300
µs , duty cycle
2%
4. Thermal Resistance follow JESD51-3.
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size



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