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CT3331-R3 Scheda tecnica(PDF) 1 Page - CT Micro International Corporation |
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CT3331-R3 Scheda tecnica(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page  CT Micro Rev 3 Proprietary & Confidential Page 1 Oct, 2014 CT3331-R3 P-Channel Enhancement MOSFET Package Outline Schematic Features • Drain-Source Breakdown Voltage VDSS - 200 V • Drain-Source On-Resistance RDS(ON) 2.3 Ω, at VGS= - 10V, IDS= - 0.2A RDS(ON) 2.4 Ω, at VGS= - 4.5V, IDS= - 0.2A • Continuous Drain Current at TA=25℃, ID = - 0.4A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD Protection Applications • Switches • Power supply circuits • Motor controls • Drivers Description The CT3331-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Gate Source Drain Gate Drain Source |
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