TLE4961-5M datasheet(13/26 Pages) INFINEON

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TLE4961-5M

Specification

Data Sheet

Revision 1.0, 2013-07-04

3.2

Absolute Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device.

Exposure to absolute maximum rating conditions for extended periods may affect device

reliability. Maximum ratings are absolute ratings; exceeding only one of these values may

cause irreversible damage to the integrated circuit.

Calculation of the dissipated power PDIS and junction temperature TJ of the chip (SOT23 example):

e.g. for: VDD = 12 V, IS = 2.5 mA, VQSAT = 0.5 V, IQ = 20 mA

Power dissipation: PDIS = 12 V x 2.5 mA + 0.5 V x 20 mA = 30 mW + 10 mW = 40 mW

Temperature ∆T = RthJA x PDIS = 300 K/W x 40 mW = 12 K

For TA = 150 °C: TJ = TA + ∆T = 150 °C + 12 K = 162 °C

Table 3-1

Absolute Maximum Rating Parameters

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Supply voltage1)

1) This lifetime statement is an anticipation based on an extrapolation of Infineon’s qualification test results. The actual lifetime

of a component depends on its form of application and type of use etc. and may deviate from such statement. The lifetime

statement shall in no event extend the agreed warranty period.

VDD

-18

10h, no external resistor required

Output voltage

-0.5

Reverse output current IQ

-70

Junction temperature1) TJ

-40

155

165

175

195

°C

for 2000h (not additive)

for 1000h (not additive)

for 168h (not additive)

for 3 x 1h (additive)

Storage temperature

-40

150

°C

Thermal resistance

Junction ambient

RthJA

300

K/W

for PG-SOT23-3-15 (2s2p)

Thermal resistance

Junction lead

RthJL

100

K/W

for PG-SOT23-3-15

Table 3-2

ESD Protection1) (TA = 25°C)

1) Characterization of ESD is carried out on a sample basis, not subject to production test.

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

ESD voltage (HBM)2)

2) Human Body Model (HBM) tests according to ANSI/ESDA/JEDEC JS-001.

VESD

-7

R = 1.5 kΩ, C = 100 pF

ESD voltage (CDM)3)

3) Charge device model (CDM) tests according to JESD22-C101.

-1

ESD voltage (system level)4)

4) Gun test (2kΩ / 330pF or 330Ω / 150pF) according to ISO 10605-2008.

-15

with circuit shown in

Figure 3-2

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