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2N6235 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6235 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2N6235 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA ; IB= 0 325 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1.0A 2.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC=1A; IB= 0.1A 1.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC=5A; IB= 1.0A 2.0 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 5V 1.0 V ICEO Collector Cutoff Current VCE= 325V; IB= 0 1.0 mA ICBO Collector Base Cutoff Current VCB=350V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 0.1 mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 25 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 25 125 hFE-3 DC Current Gain IC= 3A ; VCE= 5V 10 fT Current-Gain—Bandwidth Product IC= 0.25A ; VCE= 10V; ftest= 10MHz 20 MHz COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 0.1MHz 250 pF |
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