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2N6235 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte 2N6235
Spiegazioni elettronici  isc Silicon NPN Power Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6235 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
2N6235
DESCRIPTION
·
High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 325V(Min)
·
DC Current Gain-
: hFE = 25-125@ IC= 1A
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC = 1A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed f for high-voltage medium power and switching
reguators applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.5
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
325
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
PC
Collector Power Dissipation@TC=25℃
50
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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