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TSB611ILT Scheda tecnica(PDF) 17 Page - STMicroelectronics |
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TSB611ILT Scheda tecnica(HTML) 17 Page - STMicroelectronics |
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17 / 24 page ![]() TSB611 Application information DocID028074 Rev 1 17/24 Equation 2 Where: AFV is the voltage acceleration factor β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1) VS is the stress voltage used for the accelerated test VU is the voltage used for the application The temperature acceleration is driven by the Arrhenius model, and is defined in Equation 3. Equation 3 Where: AFT is the temperature acceleration factor Ea is the activation energy of the technology based on the failure rate k is the Boltzmann constant (8.6173 x 10 -5 eV.K-1) TU is the temperature of the die when VU is used (K) TS is the temperature of the die under temperature stress (K) The final acceleration factor, AF, is the multiplication of the voltage acceleration factor and the temperature acceleration factor (Equation 4). Equation 4 AF is calculated using the temperature and voltage defined in the mission profile of the product. The AF value can then be used in Equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration. Equation 5 To evaluate the op amp reliability, a follower stress condition is used where VCC is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by JEDEC rules). The Vio drift (in µV) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see Equation 6). Equation 6 A FV e β V S V U – . = A FT e E a k ------ 1 T U 1 T S – = . A F A FT A FV × = Months A F 1000 h × 12 months 24 h 365.25 days × × = / V CC maxV op with Vicm V CC 2 = = |
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