2SC4703 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

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isc Silicon NPN RF Transistor

2SC4703

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP. MAX UNIT

ICBO

Collector Cutoff Current

VCB= 20V; IE= 0

1.5

IEBO

Emitter Cutoff Current

VEB= 2V; IC= 0

1.5

hFE

DC Current Gain

IC= 5mA ; VCE= 5V

250

Current-Gain—Bandwidth Product

IC= 5mA ; VCE= 5V

6.0

GHz

COB

Output Capacitance

IE= 0 ; VCB= 5V;f= 1.0MHz

1.5

2.5

︱

S21e︱2 Insertion Power Gain

IC= 50mA ; VCE= 5V;f= 1.0GHz

6.5

8.3

︱

S21e︱2 Insertion Power Gain

IC= 20mA ; VCE= 10V;f= 1.0GHz

8.5

Noise Figure

IC= 50mA ; VCE= 5V;f= 1.0GHz

2.3

3.5

IM2

2nd Intermodulation Distortion

VCE = 5V, IC = 50mA,

VO = 105 dBμV/75 Ω,

f =190 MHz － 90 MHz

-55

VCE = 10V, IC = 50mA,

VO = 105 dBμV/75 Ω,

f =190 MHz － 90 MHz

-63

IM3

3nd Intermodulation Distortion

VCE = 5V, IC = 50mA,

VO = 105 dBμV/75 Ω,

f =2×190 MHz － 200 MHz

-76

VCE = 10V, IC = 50mA,

VO = 105 dBμV/75 Ω,

f =2×190 MHz － 200 MHz

-81



hFE Classification

Class

Marking

hFE

50-100

80-160

125-250

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