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2SC4703 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4703 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon NPN RF Transistor 2SC4703 DESCRIPTION · Low Distortion at Low Supply Voltage. IM2- 55 dB TYP., IM3- 76 dB TYP. @VCE = 5 V, IC = 50 mA, VO = 105dBμ/75Ω · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for low distortion ,low noise RF amplifier operating with low supply voltage (VCE = 5V). ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 0.15 A PC Collector Power Dissipation @TC=25℃ 1.8 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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