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2SD1678 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte 2SD1678
Spiegazioni elettronici  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1678 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Darlington Power Transistor
2SD1678
ELECTRICAL CHARACTERISTICS
T
B
C
B
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 30mA, RBE= ∞
100
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 1mA, RBE= ∞
100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 5mA ,IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 8A , IB= 16mA
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 15A , IB= 150mA
3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 8A , IB= 16mA
2.5
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 15A , IB= 150mA
3.5
V
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
0.1
mA
ICEO
Collector Cutoff current
VCE= 100V, RBE= ∞
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5.0
mA
hFE-1
DC Current Gain
IC= 8A ; VCE= 3V
1000
20000
hFE-2
DC Current Gain
IC= 15A ; VCE= 3V
750
Switching Times
ton
Turn-on Time
IC = 8A,IB1 = IB2= 16mA
2.5
μ
s
tstg
Storage Time
16
μ
s
tf
Fall Time
5.0
μ
s



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