2SD1678 datasheet(1/2 Pages) ISC

Il numero della parte	2SD1678

Spiegazioni elettronici	isc Silicon NPN Darlington Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

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isc Silicon NPN Darlington Power Transistor

2SD1678

DESCRIPTION

·

High DC Current Gain-hFE= 750(Min)@ IC= 15A

·

High Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 100V(Min)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for general purpose amplifier and low speed

switching applications

ABSOLUTE MAXIMUM RATINGS(T

B

a

B

=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCER

Collector-Emitter Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IB

Base Current-Continuous

0.5

A

PC

Collector Power Dissipation

@ Ta=25℃

3.5

W

Collector Power Dissipation

@ TC=25℃

100

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

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