33

Rev. 6.1/May 01

HY29F080

AC CHARACTERISTICS

Alternate CE# Controlled Erase/Program Operations

Notes:

1. Not 100% tested.

2. Typical program and erase times assume the following conditions: 25 °C, V

In addition,

programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-

tions of 90 °C, V

3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program

command. See Table 5 for further information on command sequences.

4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes

are programmed to 0x00 before erasure.

5. The typical chip programming time is considerably less than the maximum chip programming time listed since most

bytes program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum

byte program time specified is exceeded. See Write Operation Status section for additional information.

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