HY29F080 datasheet(34/38 Pages) HYNIX

Il numero della parte	HY29F080

Spiegazioni elettronici	8 Megabit (1M x 8), 5 Volt-only, Flash Memory

PDF	38 Pages

Scroll/Zoom	100%

Produttore elettronici	HYNIX [Hynix Semiconductor]

Homepage	http://www.skhynix.com/kor/main.do

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34 / 38 page

Rev. 6.1/May 01

HY29F080

AC CHARACTERISTICS

0x555 for Program

0x2AA for Erase

PA for Program

SA for Sector Erase

0x555 for Chip Erase

CE#

OE#

Addresses

WE#

Data

RY/BY#

Status

OUT

BUSY

WHWH1 or t WHWH2 or t WHWH3

0xA0 for Program

0x55 for Erase

PD for Program

0x30 for Sector Erase

0x10 for Chip Erase

RESET#

CPH

GHEL

Notes:

PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write

Operation Status section), D

OUT = array data read at VA.

Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.

Word mode addressing shown.

RESET# shown only to illustrate t

RH measurement references. It cannot occur as shown during a valid

command sequence.

Figure 23. Alternate CE# Controlled Write Operation Timings

HY29F080 Scheda tecnica(PDF) 34 Page - Hynix Semiconductor