GaAs, MMIC Fundamental Mixer,

2.5 GHz to 7.0 GHz

Data Sheet

HMC557A

Rev. C

Document Feedback

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibilityis assumedbyAnalogDevicesforitsuse,norforanyinfringementsof patentsorother

rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.

Tel: 781.329.4700

©2015–2016 Analog Devices, Inc. All rights reserved.

Technical Support

www.analog.com

FEATURES

Conversion loss: 8 dB

LO to RF isolation: 50 dB

LO to IF isolation: 35 dB

Input third-order intercept (IP3): 18 dBm

Input second-order intercept (IP2): 55 dBm

LO port return loss: 8 dBm

RF port return loss: 10 dBm

Passive double balanced topology

Wide IF bandwidth: dc to 3 GHz

24-terminal ceramic leadless chip carrier package

APPLICATIONS

WiMAX and fixed wireless

Point to point radios

Point to multipoint radios

Test equipment and sensors

Military end use

FUNCTIONAL BLOCK DIAGRAM

NIC

NIC

GND

LO

GND

2

3

4

5

6

18

17

16

15

14

13

NIC

PACKAGE

BASE

GND

GND

RF

GND

NIC

NIC

NIC = NO INTERNAL CONNECTION.

Figure 1.

GENERAL DESCRIPTION

The HMC557A is a general-purpose, double balanced mixer in

a 24-terminal, ceramic leadless chip carrier, RoHS-compliant

package. The device can be used as an upconverter or down-

converter from 2.5 GHz to 7.0 GHz. This mixer is fabricated in

a gallium arsenide (GaAs) metal semiconductor field effect

transistor (MESFET) process and requires no external

components or matching circuitry.

The HMC557A provides excellent local oscillator (LO) to radio

frequency (RF) and LO to intermediate frequency (IF) isolation

due to optimized balun structures. The RoHS-compliant

HMC557A eliminates the need for wire bonding and is compatible

with high volume surface-mount manufacturing techniques.