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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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SPC56EL54x Scheda tecnica(PDF) 125 Page - STMicroelectronics |
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SPC56EL54x Scheda tecnica(HTML) 125 Page - STMicroelectronics |
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125 / 165 page  DocID15457 Rev 12 125/165 SPC56ELx, SPC564Lx Electrical characteristics 164 3.17 Flash memory electrical characteristics IS1WWINJ (double ADC channel) C Max positive/negative injection |Vref_ad0 - Vref_ad1| < 150mV –3.6 — 3.6 mA SNR T Signal-to-noise ratio Vref = 3.3V 67 — — dB SNR T Signal-to-noise ratio Vref = 5.0V 69 — — dB THD T Total harmonic distortion — -65 — — dB SINAD T Signal-to-noise and distortion — 65 — — dB ENOB T Effective number of bits — 10.5 — — bits TUEIS1WINJ T Total unadjusted error for IS1WINJ (single ADC channels) Without current injection –6 — 6 LSB With current injection –8 — 8 LSB TUEIS1WWI NJ P Total unadjusted error for IS1WWINJ (double ADC channels) Without current injection –8 — 8 LSB T With current injection –10 — 10 LSB 1. TJ = –40 to +150 °C, unless otherwise specified and analog input voltage from VAGND to VAREF. 2. AD_CK clock is always half of the ADC module input clock defined via the auxiliary clock divider for the ADC. 3. This is the maximum frequency that the analog portion of the ADC can attain. A sustained conversion at this frequency is not possible. 4. During the sample time the input capacitance CS can be charged/discharged by the external source. The internal resistance of the analog source must allow the capacitance to reach its final voltage level within tsample. After the end of the sample time tsample, changes of the analog input voltage have no effect on the conversion result. Values for the sample clock tsample depend on programming. 5. This parameter does not include the sample time Tsample, but only the time for determining the digital result. 6. See Figure 10. 7. For the 144-pin package 8. No missing codes Table 27. ADC conversion characteristics (continued) Symbol Parameter Conditions(1) Min Typ Max Unit Table 28. Flash memory program and erase electrical specifications No. Symbol Parameter Typ (1) Initial Max (2) Lifetime Max(3) Unit 1TDWPROGRAM *(4) Double word (64 bits) program time(4) 30 — 500 µs 2TPPROGRAM *(4) Page(128 bits) program time(4) 40 160 500 µs 3T16KPPERASE *(4) 16 KB block pre-program and erase time 250 1000 5000 ms 4T48KPPERASE *(4) 48 KB block pre-program and erase time 400 1500 5000 ms 5T64KPPERASE *(4) 64 KB block pre-program and erase time 450 1800 5000 ms 6T128KPPERASE *(4) 128 KB block pre-program and erase time 800 2600 7500 ms 7T256KPPERASE *(4) 256 KB block pre-program and erase time 1400 5200 15000 ms 1. Typical program and erase times represent the median performance and assume nominal supply values and operation at 25°C. These values are characterized, but not tested. |
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