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SSG07P06 Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG07P06 Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SSG07P06 -7A, -60V, RDS(O ) 40mΩ Ω Ω Ω P-Ch Enhancement Mode Power MOSFET 19-Apr-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG07P06 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications . The SSG07P06 meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13’ inch MAXIMUM RATINGS (T A = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V TA =25°C -7 A Continuous Drain Current @VGS=10V 1 TA =70°C ID -5.6 A Pulsed Drain Current 2 IDM -28 A Total Power Dissipation TA =25°C PD 3.1 W Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings t≦10sec, 40 Thermal Resistance Junction-Ambient 1 Steady State, 105 Thermal Resistance Junction-Ambient RθJA 125 Thermal Resistance Junction-Case 1 RθJC 30 °C / W SOP-8 S S S G D D D D Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.33 0.51 B 4.70 5.10 J 0.375 REF. C 3.80 4.00 K 45°REF. D 0° 8° L 1.35 1.75 E 0.40 1.27 M 0.10 0.25 F 0.10 0.25 N 0.25 REF. G 1.27 TYP. 07P06 = Date Code |
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