SSG07P06 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG07P06

-7A, -60V, RDS(O ) 40mΩ

Ω

P-Ch Enhancement Mode Power MOSFET

19-Apr-2017 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Drain-Source Breakdown Voltage

BVDSS

-60

VGS=0V, ID= -250uA

Gate Threshold Voltage

VGS(th)

-1

-2.5

VDS=VGS, ID= -250µA

Forward Transfer conductance

gfs

VDS= -5V, ID= -7A

Gate-Body Leakage

IGSS

±100

VDS=0V, VGS= ±20V

-1

µA

VDS= -48V, VGS=0V, TJ=25°C

Zero Gate Voltage Drain Current

IDSS

-25

µA

VDS= -48V, VGS=0V, TJ=125°C

VGS= -10V, ID= -7A

Drain-Source On-Resistance

RDS(ON)

VGS= -4.5V, ID= -5A

Total Gate Charge

38.7

Gate-Source Charge

Qgs

8.6

Gate-Drain (“Miller”) Charge

Qgd

ID= -6.2A

VDS= -30V

VGS= -10V

Turn-On Delay Time

Td(on)

9.7

Rise Time

6.2

Turn-Off Delay Time

Td(off)

Fall Time

14.3

VDD= -30V

ID= -6.2A

VGS= -10V

RG=3

RL=4.8

Input Capacitance

Ciss

1910

Output Capacitance

Coss

98.1

Reverse Transfer Capacitance

Crss

62.5

VDS= -30V

VGS=0

f=1MHz

Source-Drain Diode

Diode Forward Voltage

VSD

-0.72

-1.2

VGS=0V , IS= -1A

Continuous Source Current

-4.2

Pulsed Source Current

ISM

-16

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

IF= -6.2A , dI/dt=100A/µs,TJ=25℃

Notes:

Surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

The power dissipation is limited by 150°C junction temperature.

The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.

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