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ECT25S40 Scheda tecnica(PDF) 38 Page - E-CMOS Corporation |
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ECT25S40 Scheda tecnica(HTML) 38 Page - E-CMOS Corporation |
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38 / 46 page ![]() E-CMOS Corp. (www.ecmos.com.tw) Page 38 of 46 4L08N-Rev.F001 ECT25S40 4M BIT SPI NOR FLASH DC Electrical Characteristics (T= -40℃~85℃, VCC=2.7~3.6V) Note: (1) ICC3 is measured with ATE loading Symbo l Parameter Test Condition Min. Typ Max. Unit. ILI Input Leakage Curr ent ±2 µA ILO Output Leakage Current ±2 µA ICC1 Standby Current /CS=VCC, VIN=VCC or VSS 13 25 µA ICC2 Deep Power-Down Current /CS=VCC, VIN=VCC or VSS 2 5 µA ICC3 Current: Read Single/Dual/Quad 1MHz SCLK=0.1VC C/ 0.9VCC(1) 3/4/5 3.5/5/6 mA Current: Read Single/Dual/Quad 33MHz 5/11/19 7.5/12/19.5 mA Current: Read Single/Dual/Quad 50MHz 6.5/16/30 9.5/17/33 mA Current: Read Single/Dual/Quad 108MHz 10/33/60 12/35/65 mA ICC4 Operating Current(Page Program) /CS=VCC 15 mA ICC5 Operating Current(WRSR) /CS=VCC 5 mA ICC6 Operating Current(Sector Era se) /CS=VCC 20 mA ICC7 Operating Current(Block Eras e) /CS=VCC 20 mA ICC8 Operating Current (Chip Erase) /CS=VCC 20 mA VIL Input Low Voltage -0.5 0.2VCC V VIH Input High Voltage 0.8VCC VCC+0.4 V VOL Output Low Voltage IOL =100µA 0.4 V VOH Output High Voltag e IOH =-100µA VCC-0.2 V |
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