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FDMS9409L Scheda tecnica(PDF) 5 Page - ON Semiconductor

Il numero della parte FDMS9409L
Spiegazioni elettronici  N-Channel Logic Level PowerTrench MOSFET
PDF  8 Pages
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Produttore elettronici  ONSEMI [ON Semiconductor]
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FDMS9409L Scheda tecnica(HTML) 5 Page - ON Semiconductor

  FDMS9409L Datasheet HTML 1Page - ON Semiconductor FDMS9409L Datasheet HTML 2Page - ON Semiconductor FDMS9409L Datasheet HTML 3Page - ON Semiconductor FDMS9409L Datasheet HTML 4Page - ON Semiconductor FDMS9409L Datasheet HTML 5Page - ON Semiconductor FDMS9409L Datasheet HTML 6Page - ON Semiconductor FDMS9409L Datasheet HTML 7Page - ON Semiconductor FDMS9409L Datasheet HTML 8Page - ON Semiconductor  
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©2016 Fairchild Semiconductor Corporation
FDMS9409L_F085 Rev. 1.0
Figure 5.
0.1
1
10
100 200
0.1
1
10
100
1000
OPERATION IN THIS
AREA MAY BE
LIMITED BY PACKAGE
100us
1ms
10ms
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100ms
Forward Bias Safe Operating Area
0.001
0.01
0.1
1
10
100
1
10
100
300
STARTING TJ = 150oC
STARTING TJ = 25oC
tAV, TIME IN AVALANCHE (ms)
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
1
2
345
0
40
80
120
160
200
TJ = -55oC
TJ = 25oC
TJ = 175oC
PULSE DURATION = 250μs
DUTY CYCLE = 0.5% MAX
VDD = 5V
VGS, GATE TO SOURCE VOLTAGE (V)
Transfer Characteristics
Figure 8.
0.00.2
0.40.60.81.0
1.2
0.1
1
10
100
200
TJ = 25 oC
TJ = 175 oC
VGS = 0 V
VSD, BODY DIODE FORWARD VOLTAGE (V)
Forward Diode Characteristics
Figure 9.
012
345
0
50
100
150
3V
VGS
10V Top
6V
5V
4.5V
4V
3.5V
3V
Bottom
250μs PULSE WIDTH
Tj=25oC
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics
Figure 10.
012
345
0
30
60
90
120
150
3V
VGS
10V Top
6V
5V
4.5V
4V
3.5V
3V
Bottom
250μs PULSE WIDTH
Tj=175oC
VDS, DRAIN TO SOURCE VOLTAGE (V)
Saturation Characteristics
Typical Characteristics



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