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FDMS9409L Scheda tecnica(PDF) 4 Page - ON Semiconductor

Il numero della parte FDMS9409L
Spiegazioni elettronici  N-Channel Logic Level PowerTrench MOSFET
PDF  8 Pages
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Produttore elettronici  ONSEMI [ON Semiconductor]
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FDMS9409L Scheda tecnica(HTML) 4 Page - ON Semiconductor

  FDMS9409L Datasheet HTML 1Page - ON Semiconductor FDMS9409L Datasheet HTML 2Page - ON Semiconductor FDMS9409L Datasheet HTML 3Page - ON Semiconductor FDMS9409L Datasheet HTML 4Page - ON Semiconductor FDMS9409L Datasheet HTML 5Page - ON Semiconductor FDMS9409L Datasheet HTML 6Page - ON Semiconductor FDMS9409L Datasheet HTML 7Page - ON Semiconductor FDMS9409L Datasheet HTML 8Page - ON Semiconductor  
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©2016 Fairchild Semiconductor Corporation
FDMS9409L_F085 Rev. 1.0
Typical Characteristics
Figure 1. Normalized Power Dissipation vs. Case
Temperature
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
25
50
75
100
125
150
175
200
0
30
60
90
120
150
CURRENT LIMITED
BY PACKAGE
VGS = 10V
TC, CASE TEMPERATURE(oC)
CURRENT LIMITED
BY SILICON
Figure 3.
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
SINGLE PULSE
D = 0.50
0.20
0.10
0.05
0.02
0.01
t, RECTANGULAR PULSE DURATION(s)
DUTY CYCLE - DESCENDING ORDER
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
100
1000
V
GS = 10V
SINGLE PULSE
t, RECTANGULAR PULSE DURATION(s)
2000
TC = 25oC
I = I25
175 - TC
150
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:



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