| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Toshiba Semiconductor |
GT30J126
|
194Kb/6P
|
High Power Switching Applications Fast Switching Applications
|
|
GT30J126
|
1Mb/73P
|
Bipolar Small-Signal Transistors
|
| Search Partnumber :
Start with "GT30J126" -
Total : 35 ( 1/2 Page) |
 Toshiba Semiconductor |
GT30J121
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
GT30J121
|
294Kb/6P |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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|
GT30J121
|
182Kb/6P |
Silicon N Channel IGBT High Power Switching Applications
|
|
GT30J122
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
GT30J122
|
498Kb/6P |
4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
|
|
GT30J122A
|
199Kb/7P |
Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
|
|
GT30J124
|
835Kb/16P |
Discrete IGBTs
|
|
GT30J124
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
 AG Electronica |
GT30J127
|
226Kb/2P |
MOSFET 600V 200A IGBT
|
 Toshiba Semiconductor |
GT30J101
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
GT30J101
|
193Kb/6P |
Silicon N Channel IGBT High Power Switching Applications
|
|
GT30J101
|
291Kb/6P |
Silicon N Channel IGBT
|
|
GT30J101
|
193Kb/6P |
Silicon N Channel IGBT High Power Switching Applications
|
|
GT30J110SRA
|
543Kb/10P |
Discrete IGBTs Silicon N-Channel IGBT
|
|
GT30J301
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
GT30J301
|
329Kb/6P |
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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|
GT30J311
|
835Kb/16P |
Discrete IGBTs
|
|
GT30J311
|
328Kb/6P |
N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|