| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 ON Semiconductor |
NTH4L080N120SC1
|
419Kb/8P
|
MOSFET ??Power, N-Channel, Silicon Carbide, 1200 V, 80 m
December, 2019??Rev. 1
|
|
NTH4L080N120SC1
|
409Kb/8P
|
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L
May, 2022 - Rev. 2
|
|
NTH4L080N120SC1
|
411Kb/8P
|
Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L
January, 2023 - Rev. 3
|
 Inchange Semiconductor ... |
NTH4L080N120SC1
|
360Kb/3P
|
SiC N-Channel MOSFET
|
 ON Semiconductor |
NTH4L080N120SC1
|
409Kb/8P
|
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L
May, 2022 - Rev. 2
|
|
NTH4L080N120SC1
|
411Kb/8P
|
Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L
January, 2023 - Rev. 3
|
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Start with "NTH4L080N120SC1" -
Total : 39 ( 1/2 Page) |
 ON Semiconductor |
NTH4L080N120SC1
|
409Kb/8P |
Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L
May, 2022 - Rev. 2 |
|
NTH4L080N120SC1
|
411Kb/8P |
Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L
January, 2023 - Rev. 3 |
|
NTH4L012N065M3S
|
267Kb/11P |
Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M3S, TO247-4L
October, 2025 Rev. 0 |
|
NTH4L013N120M3S
|
368Kb/8P |
Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200V, M3S, TO-247-4L
October, 2023 -Rev. 0 |
|
NTH4L014N120M3P
|
329Kb/8P |
Silicon Carbide SiC MOSFET - 14mohm, 1200V, M3, TO247-4L
August, 2022 - Rev. 2 |
|
NTH4L015N065SC1
|
337Kb/9P |
MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A
April, 2021 ??Rev. 1 |
|
NTH4L015N065SC1
|
357Kb/8P |
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L
May, 2022 - Rev. 2 |
|
NTH4L015N065SC1
|
356Kb/8P |
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L
January, 2023 - Rev. 3 |
|
NTH4L015N065SC1
|
357Kb/8P |
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L
May, 2022 - Rev. 2 |
|
NTH4L015N065SC1
|
356Kb/8P |
Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L
January, 2023 - Rev. 3 |
|
NTH4L016N065M3S
|
322Kb/11P |
Silicon Carbide (SiC) MOSFET - EliteSiC, 16 mohm 650 V, M3S, TO247-4L
October, 2025 Rev. 0 |
|
NTH4L018N075SC1
|
262Kb/8P |
Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750V, M2, TO-247-4L
February, 2024 - Rev. 0 |
|
NTH4L020N090SC1
|
331Kb/8P |
Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L
May, 2022 - Rev. 1 |
|
NTH4L020N120SC1
|
283Kb/8P |
MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 20 m, 102 A
April, 2020 ??Rev. 2 |