NTH4L080N120SC1 Scheda tecnica, PDF

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
ON Semiconductor	NTH4L080N120SC1	409Kb/8P	Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L May, 2022 - Rev. 2
	NTH4L080N120SC1	411Kb/8P	Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L January, 2023 - Rev. 3
	NTH4L012N065M3S	267Kb/11P	Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M3S, TO247-4L October, 2025 Rev. 0
	NTH4L013N120M3S	368Kb/8P	Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200V, M3S, TO-247-4L October, 2023 -Rev. 0
	NTH4L014N120M3P	329Kb/8P	Silicon Carbide SiC MOSFET - 14mohm, 1200V, M3, TO247-4L August, 2022 - Rev. 2
	NTH4L015N065SC1	337Kb/9P	MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A April, 2021 ??Rev. 1
	NTH4L015N065SC1	357Kb/8P	Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L May, 2022 - Rev. 2
	NTH4L015N065SC1	356Kb/8P	Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L January, 2023 - Rev. 3
	NTH4L015N065SC1	357Kb/8P	Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L May, 2022 - Rev. 2
	NTH4L015N065SC1	356Kb/8P	Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L January, 2023 - Rev. 3
	NTH4L016N065M3S	322Kb/11P	Silicon Carbide (SiC) MOSFET - EliteSiC, 16 mohm 650 V, M3S, TO247-4L October, 2025 Rev. 0
	NTH4L018N075SC1	262Kb/8P	Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750V, M2, TO-247-4L February, 2024 - Rev. 0
	NTH4L020N090SC1	331Kb/8P	Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L May, 2022 - Rev. 1
	NTH4L020N120SC1	283Kb/8P	MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 20 m, 102 A April, 2020 ??Rev. 2
	NTH4L020N120SC1	362Kb/8P	Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L May, 2022 - Rev. 4
	NTH4L020N120SC1	362Kb/8P	Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L January, 2023 - Rev. 5
	NTH4L020N120SC1	362Kb/8P	Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L May, 2022 - Rev. 4
	NTH4L020N120SC1	362Kb/8P	Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L January, 2023 - Rev. 5
	NTH4L022N120M3S	261Kb/9P	MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 22 m, 68 A October, 2021 ??Rev. 1
	NTH4L022N120M3S	314Kb/8P	Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L January, 2023 - Rev. 4

NTH4L080N120SC1 Scheda tecnica, PDF

NTH4L080N120SC1 Datasheet ,PDF

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