1. General Characteristics (Both 2N5671 & 2N5672)

️· Type: NPN Power Transistors
️· Case: TO-3
️· Applications: General purpose amplification & switching

2. Electrical Characteristics (Specific to Each Transistor)

2N5671

️· ICEO (Collector Cutoff Current): 10 mA (VCE = 80V)
️· ICEX (Collector Cutoff Current - with Temperature): 12 mA (VCE = 110V, VEB=-1.5V), 10 mA (VCE = 100V, VEB=-1.5V, Tc = 150°C)
️· IEBO (Emitter Cutoff Current): 10 mA (VBE = 7.0V, IC = 0)
️· hFE (DC Current Gain): 20 (IC = 15A, VCE = 2.0V); 100 (IC = 20A, VCE = 5.0V)
️· VCE(sat) (Collector-Emitter Saturation Voltage): 0.75V (IC = 15A, IB = 1.2A)
️· VBE(sat) (Base-Emitter Saturation Voltage): 1.5V (IC = 15A, IB = 1.2A)
️· fT (Transition Frequency): 50 MHz (VCE = 10V, IC = 2A)
️· Is/b (Short Circuit Output Current): 5.8A (VCE=45V)
️· Es/b (Second Breakdown Energy): 20 mJ (VBE=-4V, RBE=20Ω, L=180µH)
️· ton (Turn-on Time): 0.5 µs
️· ts (Storage Time): 1.5 µs
️· tf (Fall Time): 0.5 µs
️· CBO (Collector-Base Capacitance): 900 pF

2N5672

️· ICEO (Collector Cutoff Current): 10 mA (VCE = 80V)
️· ICEX (Collector Cutoff Current - with Temperature): 10 mA (VCE = 110V, VEB=-1.5V), 15 mA (VCE = 100V, VEB=-1.5V, Tc = 150°C)
️· IEBO (Emitter Cutoff Current): 10 mA (VBE = 7.0V, IC = 0)
️· hFE (DC Current Gain): 20 (IC = 15A, VCE = 2.0V); - (No data listed at IC=20A and VCE=5.0V)
️· VCE(sat) (Collector-Emitter Saturation Voltage): - (No data listed)
️· VBE(sat) (Base-Emitter Saturation Voltage): - (No data listed)
️· fT (Transition Frequency): - (No data listed)
️· Is/b (Short Circuit Output Current): 0.9A (VCE=45V)
️· Es/b (Second Breakdown Energy): - (No data listed)
️· ton (Turn-on Time): - (No data listed)
️· ts (Storage Time): - (No data listed)
️· tf (Fall Time): - (No data listed)
️· CBO (Collector-Base Capacitance): - (No data listed)

3. Mechanical Dimensions (Both Transistors, TO-3 Package)

️· A: 25.51 mm (1.004 in)
️· B: 38.93 mm (1.53 in)
️· C: 30.12 mm (1.18 in)
️· D: 17.25 mm (0.68 in)
️· E: 10.89 mm (0.43 in)
️· G: 11.62 mm (0.46 in)
️· H: 8.54 mm (0.34 in)
️· L: 1.55 mm (0.6 in)
️· M: 19.47 mm (0.77 in)
️· N: 1.00 mm (0.04 in)
️· P: 4.06 mm (0.16 in)

Pinout:

️· Pin 1: Base
️· Pin 2: Emitter
️· Case: Collector

Important Notes:

️· Some parameters are missing for the 2N5672.
️· The "- " indicates that no data was provided for the specific parameter.
️· The pulse width parameters (ton, ts, tf) are measured under specific test conditions (VCC = 30V, IB1 = -IB2 = 1.2A).
️· Always refer to the manufacturer's datasheet for detailed specifications and application information.

This comprehensive summary should be helpful for understanding the characteristics of the 2N5671 and 2N5672 transistors.