2N5671 datasheet(1/3 Pages) COMSET

Il numero della parte	2N5671

Spiegazioni elettronici	HIGH CURRENT FAST SWITCHING APPLICATIONS

PDF	3 Pages

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Produttore elettronici	COMSET [Comset Semiconductor]

Homepage	http://comset.halfin.com

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COMSET SEMICONDUCTORS

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NPN 2N5671 – 2N5672

The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3.

They are especially intended for high current, fast switching industrial applications.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

2N5671

90

VCEO

Collector-Emitter Voltage

2N5672

120

V

2N5671

120

VCBO

Collector-Base Voltage

2N5672

150

V

2N5671

VEBO

Emitter-Base Voltage

2N5672

7.0

V

2N5671

120

VCEX

Collector-Emitter Voltage

VEB = -1.5V, REB = 50 Ω

2N5672

150

V

2N5671

110

VCER

Collector-Emitter Voltage

REB <= 50 Ω

2N5672

140

V

2N5671

IC

Collector Current

2N5672

30

A

2N5671

IB

Base Current

2N5672

10

A

2N5671

PD

Total Device Dissipation

@ TC = 25°

2N5672

140

Watts

2N5671

TJ

Junction Temperature

2N5672

200

°C

2N5671

TStg

Storage Temperature

2N5672

-65 to +200

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

2N5671

RthJC

Thermal Resistance, Junction to Case

2N5672

1.25

°C/W

H

HIIG

GH

H C

CU

UR

RR

RE

EN

NT

T F

FA

AS

ST

T S

SW

WIIT

TC

CH

HIIN

NG

G A

AP

PP

PL

LIIC

CA

AT

TIIO

ON

NS

S

Codice articolo simile - 2N5671

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Mospec Semiconductor	2N5671	125Kb / 3P	POWER TRANSISTORS(30A,140W)
Microsemi Corporation	2N5671	54Kb / 2P	NPN HIGH POWER SILICON TRANSISTOR
Savantic, Inc.	2N5671	112Kb / 3P	Silicon NPN Power Transistors
Seme LAB	2N5671	15Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO3
Inchange Semiconductor ...	2N5671	132Kb / 3P	Silicon NPN Power Transistors

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Comset Semiconductor	2N5671	128Kb / 4P	HIGH CURRENT FAST SWITCHING APPLICATIONS
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2N5671 Scheda tecnica(PDF) 1 Page - Comset Semiconductor

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