2N5671 datasheet(2/3 Pages) COMSET

2 / 3 page

COMSET SEMICONDUCTORS

2/3

NPN 2N5671 – 2N5672

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

2N5671

VCEO(SUS)

Collector-Emitter

Sustaining Voltage (1)

IC=200 mA, IB=0

2N5672 120

2N5671 110

VCER(SUS)

RBE=50Ω

Collector-Emitter

Sustaining Voltage (1)

IC=0.2 A , RBE=50Ω

2N5672 140

2N5671 120

VCEX(SUS)

Collector-Emitter

Sustaining Voltage (1)

IC=0.2 A , VBE=-1.5V , RBE=50Ω

2N5672 150

2N5671

ICEO

Collector Cutoff Current

VCE=80 V

2N5672

VCE=110 V, VEB=-1.5 V,

2N5671

VCE=135 V, VEB=-1.5 V,

2N5672

2N5671

ICEX

Collector Cutoff Current

VCE=100 V, VEB=-1.5 V,

TC=150°C

2N5672

2N5671

IEBO

Emitter Cutoff Current

VBE=7.0 V, IC=0

2N5672

2N5671

IC=15 A, VCE=2.0 V

2N5672

100

2N5671

hFE

DC Current Gain (1)

IC=20 A, VCE=5.0 V

2N5672

2N5671

VCE(SAT)

Collector-Emitter

saturation Voltage (1)

IC=15 A, IB=1.2 A

2N5672

0.75

2N5671

VBE(SAT)

Base-Emitter saturation

Voltage (1)

IC=15 A, IB=1.2 A

2N5672

1.5

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

2N5671

VBE

Base-Emitter Voltage (1)

IC=15 A, VCE=5.0 V

2N5672

1.6

2N5671

Transition frequency

VCE=10 V, IC=2 A,

2N5672

MHz

VCE=24 V

2N5671 5.8

Is/b

Second Breakdown energy

(2)

VCE=45 V

2N5672 0.9

2N5671

Es/b

Second Breakdown energy

VBE=-4 V, RBE=20Ω ,L=180µH 2N5672 20

2N5671

ton

Turn-on time

2N5672

0.5

2N5671

Storage time

2N5672

1.5

2N5671

File time

IC=15 A , VCC=30 V

IB1 = -IB2 =1.2 A

2N5672

0.5

µs

2N5671

CBO

Collector-Base Capacitance IE= 0 , VCB= 10 V , f = 1MHz

2N5672

900

(1) Pulse Width

≈ 300 µs, Duty Cycle =1.5%

(2) Pulsed : 1 s, non repetitive pulse

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