| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 California Eastern Labs |
NE3512S02
|
270Kb / 8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
|
NE3514S02
|
285Kb / 8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
|
NE3515S02-A
|
415Kb / 9P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
 Renesas Technology Corp |
NE3210S01
|
197Kb / 18P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1999 |
|
NE32484A
|
195Kb / 14P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1991 |
|
NE32500
|
199Kb / 10P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1996 |
|
NE32900
|
181Kb / 10P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1997 |
|
NE32984D
|
207Kb / 14P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1995 |
|
NE34018
|
250Kb / 18P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
2000 |
|
NE38018
|
236Kb / 13P |
Hetero Junction Field Effect transistor
2003 |