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FDMF6840C Scheda tecnica(PDF) 4 Page - ON Semiconductor

Il numero della parte FDMF6840C
Spiegazioni elettronici  Extra-Small, High-Performance, High-Frequency DrMOS Module
PDF  19 Pages
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FDMF6840C Scheda tecnica(HTML) 4 Page - ON Semiconductor

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Absolute Maximum Ratings
Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VCIN
Supply Voltage
Referenced to CGND
-0.3
6.0
V
VDRV
Drive Voltage
Referenced to CGND
-0.3
6.0
V
VDISB#
Output Disable
Referenced to CGND
-0.3
6.0
V
VPWM
PWM Signal Input
Referenced to CGND
-0.3
6.0
V
VSMOD#
Skip Mode Input
Referenced to CGND
-0.3
6.0
V
VGL
Low Gate Manufacturing Test Pin
Referenced to CGND
-0.3
6.0
V
VTHWN#
Thermal Warning Flag
Referenced to CGND
-0.3
6.0
V
VIN
Pow er Input
Referenced to PGND, CGND
-0.3
25.0
V
VBOOT
Bootstrap Supply
Referenced to VSWH, PHASE
-0.3
6.0
V
Referenced to CGND
-0.3
25.0
V
VGH
High Gate Manufacturing Test Pin
Referenced to VSWH, PHASE
-0.3
6.0
V
Referenced to CGND
-0.3
25.0
V
VPHS
PHASE
Referenced to CGND
-0.3
25.0
V
VSWH
Sw itch Node Input
Referenced to PGND, CGND (DC Only)
-0.3
25.0
V
Referenced to PGND, <20 ns
-8.0
28.0
V
VBOOT
Bootstrap Supply
Referenced to VDRV
22.0
V
Referenced to VDRV, <20 ns
25.0
V
ITHWN#
THWN# Sink Current
-0.1
7.0
mA
IO(AV)
Output Current
(1)
fSW=300 kHz, VIN=12 V, VO=1.0 V
50
A
fSW=1 MHz, VIN=12 V, VO=1.0 V
45
θJPCB
Junction-to-PCB Thermal Resistance
2.7
°C/W
TA
Ambient Temperature Range
-40
+125
°C
TJ
Maximum Junction Temperature
+150
°C
TSTG
Storage Temperature Range
-55
+150
°C
ESD
Electrostatic Discharge Protection
Human Body Model, JESD22-A114
2000
V
Charged Device Model, JESD22-C101
2500
Note:
1.
IO(AV) is rated using ON Semiconductor’s DrMOS evaluation board, at TA = 25°C, w ith natural convection cooling.
This rating is limited by the peak DrMOS temperature, TJ = 150°C, and varies depending on operating conditions
and PCB layout. This rating can be changed w ith different application settings.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet spec ifications. ON Semiconductor
does not recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCIN
Control Circuit Supply Voltage
4.5
5.0
5.5
V
VDRV
Gate Drive Circuit Supply Voltage
4.5
5.0
5.5
V
VIN
Output Stage Supply Voltage
3.0
12.0
16.0
(2)
V
Note:
2.
Operating at high VIN can create excessive AC overshoots on the VSWH-to- GND and BOOT-to- GND nodes
during MOSFET sw itching transients. For reliable Dr MOS operation, VSWH-to- GND and BOOT-to-GND must
remain at or below the Absolute Maximum Ratings show n in the table above. Refer to the “Application
Information” and “PCB Layout Guidelines” sections of this datasheet for additional information.



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