GD25B16CSIG datasheet(42/53 Pages) GIGADEVICE

Il numero della parte	GD25B16CSIG

Spiegazioni elettronici	3.3V Uniform Sector Dual and Quad Serial Flash

PDF	53 Pages

Scroll/Zoom	100%

Produttore elettronici	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

Homepage	http://www.gigadevice.com/

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42 / 53 page

3.3V Uniform Sector

Dual and Quad Serial Flash

GD25B16C

8. ELECTRICAL CHARACTERISTICS

8.1. POWER-ON TIMING

Vcc(max)

Vcc(min)

VWI

tVSL

Chip Selection is not allowed

Device is fully

accessible

Time

Table6. Power-Up Timing and Write Inhibit Threshold

Symbol

Parameter

Min

Max

Unit

tVSL

VCC(min) To CS# Low

1.8

VWI

Write Inhibit Voltage

1.5

2.5

8.2. INITIAL DELIVERY STATE

The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register

contains 00H (all Status Register bits are 0), except QE bit (S9) is set to 1..

8.3. ABSOLUTE MAXIMUM RATINGS

Parameter

Value

Unit

Ambient Operating Temperature

-40 to 85

℃

Storage Temperature

-65 to 150

℃

Applied Input / Output Voltage

-0.6 to VCC+0.4

Transient Input / Output Voltage

-2.0 to VCC+2.0

VCC

-0.6 to 4.2

Figure 37. Input Test Waveform and Measurement Level

Vss

20ns

Maximum Negative Overshoot Waveform

Maximum Positive Overshoot Waveform

20ns

Vss-2.0V

Vcc

20ns

Vcc + 2.0V

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