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GD25Q64CFJS Scheda tecnica(PDF) 53 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25Q64CFJS Scheda tecnica(HTML) 53 Page - GigaDevice Semiconductor (Beijing) Inc. |
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53 / 74 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25Q64C 53 (T= -40 ℃~105℃, VCC=2.7~3.6V) Symbol Parameter Test Condition Min. Typ. Max. Unit. ILI Input Leakage Current ±2 μA ILO Output Leakage Current ±2 μA ICC1 Standby Current CS#=VCC, VIN=VCC or VSS 1 25 μA ICC2 Deep Power-Down Current CS#=VCC, VIN=VCC or VSS 1 25 μA ICC3 Operating Current (Read) CLK=0.1VCC / 0.9VCC at 80MHz Q=Open(*1, *2,*4 I/O) 15 20 mA CLK=0.1VCC / 0.9VCC at 60MHz Q=Open(*1,*2,*4 I/O) 13 18 mA ICC4 Operating Current (PP) CS#=VCC 25 mA ICC5 Operating Current(WRSR) CS#=VCC 25 mA ICC6 Operating Current (SE) CS#=VCC 25 mA ICC7 Operating Current (BE) CS#=VCC 25 mA ICC8 Operating Current (CE) CS#=VCC 25 mA ICC9 High Performance Current 0.6 1.5 mA VIL Input Low Voltage -0.5 0.2VCC V VIH Input High Voltage 0.7VCC VCC+0.4 V VOL Output Low Voltage IOL =100uA 0.2 V VOH Output High Voltage IOH =- 100μA VCC-0.2 V Note: 1. Typical value tested at T = 25℃. 2. Value guaranteed by design and/or characterization, not 100% tested in production. |
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