GD25Q64CFJS datasheet(13/74 Pages) GIGADEVICE

13 / 74 page

3.3V Uniform Sector

Dual and Quad Serial Flash

GD25Q64C

COMMANDS DESCRIPTION

All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the first

rising edge of SCLK after CS# is driven low. Then, the one-byte command code must be shifted in to the device, with most

significant bit first on SI, and each bit is latched on the rising edges of SCLK.

See Table2, every command sequence starts with a one-byte command code. Depending on the command, this might be

followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last bit of the command

sequence has been completed. For the commands of Read, Fast Read, Read Status Register or Release from Deep Power-

Down, and Read Device ID, the shifted-in command sequence is followed by a data-out sequence. All read instruction can

be completed after any bit of the data-out sequence is being shifted out, and then CS# must be driven high to return to

deselected status.

For the commands of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable, Write

Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary, otherwise the command is

rejected, and is not executed. That means CS# must be driven high when the number of clock pulses after CS# being driven

low is an exact multiple of eight. For Page Program, if CS# is driven high at any time the input byte is not a full byte, nothing

will happen and WEL will not be reset.

Table2. Commands (Standard/Dual/Quad SPI)

Command Name

Byte 1

Byte 2

Byte 3

Byte 4

Byte 5

Byte 6

n-Bytes

Write Enable

06H

Write Disable

04H

Volatile SR

Write Enable

50H

Read Status Register-1

05H

(S7-S0)

(continuous)

Read Status Register-2

35H

(S15-S8)

(continuous)

Read Status Register-3

15H

(S23-S16)

(continuous)

Write Status Register-1

01H

S7-S0

Write Status Register-2

31H

S15-S8

Write Status Register-3

11H

S23-S16

Read Data

03H

A23-A16

A15-A8

A7-A0

(D7-D0)

(Next byte)

(continuous)

Fast Read

0BH

A23-A16

A15-A8

A7-A0

dummy

(D7-D0)

(continuous)

Dual Output

Fast Read

3BH

A23-A16

A15-A8

A7-A0

dummy

(D7-D0)(1)

(continuous)

Dual I/O

Fast Read

BBH

A23-A8(2)

A7-A0

M7-M0(2)

(D7-D0)(1)

(Next

byte)

(Next byte)

(continuous)

Quad Output

Fast Read

6BH

A23-A16

A15-A8

A7-A0

dummy

(D7-D0)(3)

(continuous)

Quad I/O

Fast Read

EBH

A23-A0

M7-M0(4)

dummy(5)

(D7-D0)(3)

(Next

byte)

(Next byte)

(continuous)

Quad I/O Word

Fast Read(7)

E7H

A23-A0

M7-M0(4)

dummy(6)

(D7-D0)(3)

(Next

byte)

(Next byte)

(continuous)

Page Program

02H

A23-A16

A15-A8

A7-A0

D7-D0

Next byte

continuous

Quad Page Program

32H

A23-A16

A15-A8

A7-A0

D7-D0

Next byte

continuous

Fast Page Program

F2H

A23-A16

A15-A8

A7-A0

D7-D0

Next byte

continuous

Sector Erase

20H

A23-A16

A15-A8

A7-A0

Block Erase(32K)

52H

A23-A16

A15-A8

A7-A0

Block Erase(64K)

D8H

A23-A16

A15-A8

A7-A0

Chip Erase

C7/60

Enable Reset

66H

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