M58LT128GST datasheet(44/98 Pages) STMICROELECTRONICS

Il numero della parte	M58LT128GST

Spiegazioni elettronici	128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories

PDF	98 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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44 / 98 page

7 Read modes

M58LT128GST, M58LT128GSB

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WAIT being gated by E, it will remain active and will not revert to high impedance when G goes

High. So if two or more devices are connected to the system’s READY signal, to prevent bus

contention the WAIT signal of the M58LT128GST and M58LT128GSB should not be directly

connected to the system’s READY signal.

WAIT will revert to high-impedance when Output Enable, G, or Chip Enable, E, goes High.

See Table 23: Synchronous Read AC Characteristics, and Figure 13: Synchronous Burst Read

Suspend AC Waveforms, for details.

7.2.2

Single Synchronous Read mode

Single Synchronous Read operations are similar to Synchronous Burst Read operations except

that the memory outputs the same data to the end of the operation.

Synchronous Single Reads are used to read the Electronic Signature, Status Register, CFI,

Configuration Register Status, or Protection Register. When the addressed bank is in Read

CFI, Read Status Register or Read Electronic Signature mode, the WAIT signal is deasserted

when Output Enable, G, is at VIH or for the one clock cycle during which output data is valid.

Otherwise, it is asserted.

See Table 23: Synchronous Read AC Characteristics, and Figure 11: Synchronous Burst Read

AC Waveforms, for details.

M58LT128GST Scheda tecnica(PDF) 44 Page - STMicroelectronics