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M58LT128GST Scheda tecnica(PDF) 47 Page - STMicroelectronics

Il numero della parte M58LT128GST
Spiegazioni elettronici  128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
PDF  98 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LT128GST Scheda tecnica(HTML) 47 Page - STMicroelectronics

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M58LT128GST, M58LT128GSB
9 Program and Erase times and Endurance cycles
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Program and Erase times and Endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are shown in
Table 16 Exact erase times may change depending on the memory array condition. The best
case is when all the bits in the block are at ‘0’ (pre-programmed). The worst case is when all the
bits in the block are at ‘1’ (not preprogrammed). Usually, the system overhead is negligible with
respect to the erase time. In the M58LT128GST and M58LT128GSB the maximum number of
Program/Erase cycles depends on the VPP voltage supply used.
Table 16.
Program/Erase Times and Endurance Cycles
Parameter
Condition(1)(2)
Min
Typ
Typical
after
100kW/E
Cycles
Max
Unit
Erase
Parameter Block (16 KWord)
0.4
1
2.5
s
Main Block (64
KWord)
Preprogrammed
1
3
4
s
Not Preprogrammed
1.2
4
s
Program(3)
SIngle Cell
Word Program
30
60
µs
Buffer Program
30
60
µs
Single Word
Word Program
90
180
µs
Buffer Program
90
180
µs
Buffer (32 Words) (Buffer Program)
440
880
µs
Main Block (64 KWord)
880
ms
Suspend Latency
Program
20
25
µs
Erase
20
25
µs
Program/Erase
Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles



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