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STL36N60M6 Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STL36N60M6
Spiegazioni elettronici  N-channel 600 V, 91 mΩ typ., 25 A MDmesh™M6 Power MOSFET in a PowerFLAT™8x8 HV package
PDF  15 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL36N60M6 Scheda tecnica(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GIPG200920180941SOA
10 2
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp =10 µs
tp =100 µs
tp =1 ms
tp =10 ms
tp =1 µs
Operation in this area is
limited by R DS(on)
single pulse
TJ≤150 °C
TC=25 °C
VGS=10 V
Figure 2. Thermal impedance
10
-5
10
-4
10
-3
10
-2
tp(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Single pulse
δ=0.5
Zth= K*RthJ-c
δ= tp/Ƭ
tp
Ƭ
Zth PowerFLAT 8x8 HV
Figure 3. Output characteristics
GADG220320170910OCH
100
80
60
40
20
0
0
2
4
6
8
10 12 14 16
ID
(A)
VDS (V)
VGS = 9, 10V
VGS = 8V
VGS = 7V
VGS = 5V
VGS = 6V
Figure 4. Transfer characteristics
GADG220320170910TCH
100
80
60
40
20
0
3
4
5
6
7
8
9
ID
(A)
VGS (V)
VDS = 18V
Figure 5. Gate charge vs gate-source voltage
GADG030220171159QVG
12
10
8
6
4
2
0
600
500
400
300
200
100
0
0
10
20
30
40
50
VGS
(V)
VDS
(V)
Q g (nC)
VDS
VDD = 480 V
ID = 30 A
Figure 6. Static drain-source on-resistance
GIPG200920180942RID
97
95
93
91
89
87
85
0
4
8
12
16
20
24
RDS(on)
(mΩ)
ID (A)
VGS = 10 V
STL36N60M6
Electrical characteristics (curves)
DS11134 - Rev 4
page 5/15



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