STL36N60M6 datasheet(6/15 Pages) STMICROELECTRONICS

Il numero della parte	STL36N60M6

Spiegazioni elettronici	N-channel 600 V, 91 mΩ typ., 25 A MDmesh™M6 Power MOSFET in a PowerFLAT™8x8 HV package

PDF	15 Pages

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Figure 7. Capacitance variations

GADG220320170921CVR

104

103

102

101

100

10-1

100

101

102

(pF)

VDS (V)

CISS

COSS

CRSS

f= 1MHz

Figure 8. Normalized gate threshold voltage vs

temperature

GIPG300920151316VTH

1.1

1.0

0.9

0.8

0.7

0.6

-75

-25

125

VGS(th)

(norm.)

TJ (°C)

ID = 250 µA

Figure 9. Normalized on-resistance vs temperature

GIPG300920151317RON

2.2

1.8

1.4

1.0

0.6

0.2

-75

-25

125

RDS(on)

(norm.)

TJ (°C)

VGS = 10 V

Figure 10. Normalized V(BR)DSS vs temperature

GIPG300920151318BDV

1.08

1.04

1.00

0.96

0.92

0.88

-75

-25

125

V(BR)DSS

(norm.)

TJ (°C)

ID = 1 mA

Figure 11. Output capacitance stored energy

GADG010220171214EOS

100 200 300 400 500 600

EOSS

(µJ)

VDS (V)

Figure 12. Source-drain diode forward characteristics

GIPG200920180943SDF

1.1

1.0

0.9

0.8

0.7

0.6

0.5

VSD

(V)

ISD (A)

TJ = -50

℃

TJ = 25

℃

TJ = 150

℃

STL36N60M6

Electrical characteristics (curves)

DS11134 - Rev 4

page 6/15

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