STL36N60M6 datasheet(1/15 Pages) STMICROELECTRONICS

Il numero della parte	STL36N60M6

Spiegazioni elettronici	N-channel 600 V, 91 mΩ typ., 25 A MDmesh™M6 Power MOSFET in a PowerFLAT™8x8 HV package

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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PowerFLAT™ 8x8 HV

NG1DS2PS34D5Z

Drain(5)

Gate(1)

Driver

source (2)

Power

source (3, 4)

Features

Order code

VDS

RDS(on) max.

ID

STL36N60M6

600 V

110 mΩ

25 A

•

Reduced switching losses

•

Lower RDS(on) x area vs previous generation

•

Low gate input resistance

•

100% avalanche tested

•

Zener-protected

•

Excellent switching performance thanks to the extra driving source pin

Applications

•

Switching applications

•

LLC converters

•

Boost PFC converters

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to

the well-known and consolidated MDmesh family of SJ MOSFETs.

STMicroelectronics builds on the previous generation of MDmesh devices through its

new M6 technology, which combines excellent RDS(on) per area improvement with

one of the most effective switching behaviors available, as well as a user-friendly

experience for maximum end-application efficiency.

Product status link

STL36N60M6

Product summary

Order code

STL36N60M6

Marking

36N60M6

Package

PowerFLAT™ 8x8 HV

Packing

Tape and reel

N-channel 600 V, 91 mΩ typ., 25 A MDmesh™ M6

Power MOSFET in a PowerFLAT™ 8x8 HV package

STL36N60M6

Datasheet

DS11134 - Rev 4 - September 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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