STM8AF6213 datasheet(69/112 Pages) STMICROELECTRONICS

69 / 112 page

DS9884 Rev 9

69/112

STM8AF6213/13A/23/23A/26

Electrical characteristics

108

HSE oscillator critical gm formula

The crystal characteristics have to be checked with the following formula:

gm gmcrit

where gmcrit can be calculated with the crystal parameters as follows:

gmcrit

HSE

()

2Co C

()

Rm: Notional resistance (see crystal specification)

Lm: Notional inductance (see crystal specification)

Cm: Notional capacitance (see crystal specification)

Co: Shunt capacitance (see crystal specification)

CL1 = CL2 = C: Grounded external capacitance

10.3.4

Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA.

High speed internal RC oscillator (HSI)

Table 42. HSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHS

HSI oscillator user trimming

accuracy

Trimmed by the

application for any VDD

and TA conditions

3-bit

calibration

-1(1)

4-bit

calibration

-0.5(1)

HSI oscillator accuracy

(factory calibrated)

3.0 V

≤ VDD ≤ 5.5 V,

-40 °C

≤ TA ≤ 150 °C

-5

3.0 V

≤ VDD ≤ 5.5 V,

-40 °C

≤ TA ≤ 125 °C

-3(2)

tsu(HSI) HSI oscillator wakeup time

2(3)

µs

IDD(HSI)

HSI oscillator power

consumption

170

250(3)

µA

1. Selection between legacy 3-bit calibration and 4-bit extended calibration is done using the HSITRIM bit in OPT3 and

NOPT3.To achieve a higher accuracy, 4-bit calibration must be enabled.

2. These values are guaranteed for STM8AF62xxIxx order codes only.

3. Guaranteed by characterization results.

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