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STM8AF6213 Scheda tecnica(PDF) 70 Page - STMicroelectronics

Il numero della parte STM8AF6213
Spiegazioni elettronici  Automotive 8-bit MCU, with up to 8-Kbyte Flash memory, data EEPROM, 10-bit ADC, timers, LIN, SPI, I²C, 3 to 5.5 V
PDF  112 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8AF6213 Scheda tecnica(HTML) 70 Page - STMicroelectronics

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Electrical characteristics
STM8AF6213/13A/23/23A/26
70/112
DS9884 Rev 9
Low speed internal RC oscillator (LSI)
Subject to general operating conditions for VDD and TA.
10.3.5
Memory characteristics
RAM and hardware registers
Flash program memory/data EEPROM memory
General conditions: TA = -40 to 150 °C.
Table 43. LSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fLSI
Frequency
-
110(1)
1. Tested in production.
128
150(1)
kHz
tsu(LSI) LSI oscillator wakeup time
-
-
-
7
µs
IDD(LSI) LSI oscillator power consumption
-
-
5
-
µA
Table 44. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing the data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design.
Halt mode (or reset)
VIT-max(2)
2. Refer to the operating conditions for the value of VIT-max
V
Table 45. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU is 0 to 16 MHz
with 0 ws
3.0
-
5.5
V
Operating voltage
(code execution)
2.6
-
5.5
tprog
Standard programming time (including
erase) for byte/word/block
(1 byte/4 byte/64 byte)
--
6.0
6.6
ms
Fast programming time for 1 block
(64 byte)
--
3.0
3.3
tERASE Erase time for 1 block (64 byte)
-
-
3.0
3.3



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