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STEC01 Scheda tecnica(PDF) 6 Page - STMicroelectronics |
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STEC01 Scheda tecnica(HTML) 6 Page - STMicroelectronics |
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6 / 22 page ![]() 5 Electrical characteristics TA = 25 °C, VBAT = 3.7 V, CBAT = 1 μF, T1P1=T1P2=GND, RTPF = 100 kΩ, T3P = GND, unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit VBAT Supply voltage range 2.2 5 V VUVLO Undervoltage lockout Turn-on, voltage rising, TA from -40 to 85 °C 1.7 1.9 2.2 V VHyst UVLO hysteresis VBAT falling 0.05 V tBATT_PWM VBAT valid to PWM time VBAT rising above UVLO then PWM rising 1 3.5 ms VPWM PWM input voltage range TA from -40 to 85 °C 1 10 V VIL_MAX PWM threshold TA from -40 to 85 °C 0.3 V VIH_MIN 0.9 PWM_HysT PWM hysteresis 0.006 0.05 FPWM PWM operating frequency (1) 4 5000 Hz tPWM_HI PWM minimum high time 40 µs RDS(on) Internal power MOSFET on- resistance VBAT = 2.5 V, IPWR=1 A 12 mΩ VBAT = 3 V, IPWR=1 A 11.3 TA from -40 to 85 °C, VBAT=>2.5 V IPWR=1 A 20 IL_PWR NFET leakage current PWR=10 V, fault condition 1.5 µA IBATT Battery supply current VBAT from 2.2 to 5 V, active mode 30 µA IBATT_IDLE Idle battery current IC in idle-mode 2 4 µA IC in idle-mode, TA from -40 to 85 °C 10 RGDRV_H Gate drive high resistance IGDRV=5 mA, PWM=high, T1 and T2 not expired 30 Ω RGDRV_L Gate drive low resistance IGDRV=-5 mA, IC idle or in fault mode 8 VHW_RESET Hardware reset threshold TA from -40 to 85 °C 0.3 0.9 V IHW_RESET Hardware reset leakage TA from -40 to 85 °C, VHW_RESET=10 V 1 µA tHW_RESET_dl Hardware reset deglitch time 10 ms VRESET/FAULT VOL_MAX IRESET=2 mA, fault condition, TA from -40 to 85 °C 0.2 V IRESET/FAULT Reset leakage current VRESET/FAULT=5 V, TA from -40 to 85 °C 1 µA tPW_RESET Reset pulse width 50 57 66 ms VPT Programming threshold pins VIL, input logic low Applies to T1P1, T1P2, T3P 0.2 V STEC01 Electrical characteristics DS13063 - Rev 2 page 6/22 |
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