 |
Motore di ricerca datesheet componenti elettronici |
|
|
Motore di ricerca datesheet componenti elettronici |
|
STS2321 Scheda tecnica(PDF) 1 Page - SamHop Microelectronics Corp. |
|
|
|||||||||||||||||||||||||||||
STS2321 Scheda tecnica(HTML) 1 Page - SamHop Microelectronics Corp. |
|
|
1 / 7 page  -20 P-Channel Enhancement Mode Field Effect Transistor Oct .29 2004 V1.1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS V Gate-Source Voltage VGS V Drain Current-Continuous @TJ=25 C -Pulsed ID -3.2 A A A W IDM -11 Drain-Source Diode Forward Current IS -1.25 Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ, TSTG -55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient RthJA 100 /W C STS2321 1.25 a a a a b G D S SOT-23 S G D 1 SamHop Microelectronics Corp. PRODUCT SUMMARY VDSS ID RDS(ON) ( m W ) Max -20V -3.2A 65 @ VGS = -4.5V 90 @ VGS =-2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. 10 |
Codice articolo simile - STS2321 |
|
Descrizione simile - STS2321 |
|
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Italian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
