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STS2321 Scheda tecnica(PDF) 3 Page - SamHop Microelectronics Corp.

Il numero della parte STS2321
Spiegazioni elettronici  P-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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Produttore elettronici  SAMHOP [SamHop Microelectronics Corp.]
Homepage  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS2321 Scheda tecnica(HTML) 3 Page - SamHop Microelectronics Corp.

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STS2321
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS = 0V, Is =-1.25A
-0.78 -1.2
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
-VDS, Drain-to Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
a.Surface Mounted on FR4 Board, t 10sec.
5
0
5
10
15
20
25
30
Ciss
Coss
1000
800
600
400
200
0
20
16
12
8
4
0
0
2
4
6
8
10
12
-VGS=10,9,8,7,6,5,4V
3
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100 125
Tj( C)
-25
25
75
VGS=-4.5V
ID=-3.2A
Crss
25 C
25
20
15
10
5
0
0.0
0.2
0.4
0.6
0.8
1.0
Tj=125 C
-55 C
-VGS=2V
-VGS=3V
1.2



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