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STS2321 Scheda tecnica(PDF) 4 Page - SamHop Microelectronics Corp.

Il numero della parte STS2321
Spiegazioni elettronici  P-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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Produttore elettronici  SAMHOP [SamHop Microelectronics Corp.]
Homepage  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS2321 Scheda tecnica(HTML) 4 Page - SamHop Microelectronics Corp.

  STS2321 Datasheet HTML 1Page - SamHop Microelectronics Corp. STS2321 Datasheet HTML 2Page - SamHop Microelectronics Corp. STS2321 Datasheet HTML 3Page - SamHop Microelectronics Corp. STS2321 Datasheet HTML 4Page - SamHop Microelectronics Corp. STS2321 Datasheet HTML 5Page - SamHop Microelectronics Corp. STS2321 Datasheet HTML 6Page - SamHop Microelectronics Corp. STS2321 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 7. Transconductance Variation
with Drain Current
-IDS, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
-VDS, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
-VSD, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
20
10
0
1
0.4
0.6
0.8
1.0
1.2
1.4
4
3
2
1
0
0
1
2
3
4
5
6
7
8
VDS=-10V
ID=-3.2A
TJ=25 C
13
10
1 1
0.1
0.03
0.1
1
10 20
50
RD
S(
ON
) L
im
it
10m
s
100
ms
1s
DC
VGS=-4.5V
Single Pulse
Tc=25 C
4
-50 -25
0
25 50
75 100 125
1.10
1.07
1.04
1.00
0.97
0.94
0.91
ID=-250uA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125
VDS=VGS
ID=-250uA
10
8
6
4
12
0
0
5
10
15
20
25
2
VDS=-5V
5
STS2321



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